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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product specification Supersedes data of 2002 Jan 23 2004 Aug 10 Philips Semiconductors Product specification High-speed diodes FEATURES · Hermetically sealed leaded glass SOD27 (DO-35) package · High switching speed: max. 4 ns · General application · Continuous reverse voltage: max. 100 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching. DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. MARKING TYPE NUMBER 1N4148 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 1N4448 - DESCRIPTION The diodes are type branded. handbook, halfpage k 1N4148; 1N4448 a MAM246 Fig.1 Simplified outline (SOD27; DO-35) and symbol. MARKING CODE 1N4148PH or 4148PH 1N4448 VERSION SOD27 hermetically sealed glass package; axial leaded; 2 leads 2004 Aug 10 2 Philips Semiconductors Product specification High-speed diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF 1N4148 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0 V; see Fig.6 - - - - CONDITIONS total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - see Fig.2; note 1 CONDITIONS - - - - 1N4148; 1N4448 MIN. MAX. 100 100 200 450 V V UNIT mA mA 4 1 0.5 500 +200 200 A A A mW °C °C -65 - MIN. 1 MAX. V V V UNIT 0.62 - 0.72 1 25 50 3 4 4 nA µA µA pF ns when switched from IF = 10 mA to - IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 - Vfr forward recovery voltage 2.5 V THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. Device mounted on a printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W 2004 Aug 10 3 Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA 1N4148; 1N4448 300 IF (mA) 200 mbg451 handbook, halfpage 600 MBG464 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (°C) 200 0 0 (1) Tj = 175 °C; typical