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FDP7042L / FDB7042L June 2000 PRELIMINARY FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) . Features · 50 A, 30 V. RDS(ON) = 9 m @ VGS = 4.5 V RDS(ON) = 7.5 m @ VGS = 10 V · Critical DC electrical parameters specified at elevated temperature · High performance trench technology for extremely low RDS(ON) · 175°C maximum junction temperature rating Applications · Synchronous rectifier · DC/DC converter D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current ­ Continuous ­ Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 12 (Note 1) (Note 1) Units V V A W W°C °C 50 150 83 0.48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB7042L FDP7042L Device FDB7042L FDP7042L Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 2000 Fairchild Semiconductor Corporation FDP7042L Rev B(W) FDP7042L / FDB7042L Electrical Characteristics Symbol BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain­Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate­Body Leakage, Forward Gate­Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 12 V, VGS = ­12 V VGS = 0 V VDS = 0 V VDS = 0 V Min 30 Typ Max Units V Off Characteristics 24 1 100 ­100 0.8 1.2 ­4.1 6.2 5.5 9.6 60 117 2418 549 243 21 VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 20 60 30 VDS = 15 V, ID = 50 A, VGS = 4.5 V 32 10 9 50 (Note 2) mV/°C µA nA nA V mV/°C 9 7.5 16 m A S pF pF pF 34 32 96 48 51 ns ns ns ns nC nC nC A V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain­Source On­Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 25A ID = 25A VGS = 10 V, VGS= 4.5 V, ID =25A, TJ=125°C VGS = 4.5 V, VDS = 5V, VDS = 10 V ID = 25 A 2 ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: On­State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) Dynamic Characteristics VDS = 15 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics Turn­On Delay Time Turn­On Rise Time Turn­Off Delay Time Turn­Off Fall Time Total Gate Charge Gate­Source Charge Gate­Drain Charge