Hynix DDR3 SDRAM [SDRAM] [SODIMM] free download

File name hynix_204pin_©_.pdf

204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 1Gb B-die HMT164S6BFR6C HMT112S6BFR6C HMT125S6BFR8C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 1.0 / Jul. 2010 1 Revision History Revision No. 0.1 0.2 0.3 0.4 0.5 1.0 History Initial Release Modified Speed grade. Corrected typo on package ball feature. Added IDD Specification Updated IDD Specification Corrected typo JEDEC Update. Add supported CL5 Draft Date Oct. 2008 Dec. 2008 Feb. 2009 Apr. 2009 Sep. 2009 Jul. 2010 Remark Rev. 1.0 / Jul. 2010 2 Description Hynix Unbuffered Small Outline DDR3 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM SODIMMs are intended for use as main memory when installed in systems such as mobile personal computers. Features · VDD=1.5V +/- 0.075V · VDDQ=1.5V +/- 0.075V · VDDSPD=3.0V to 3.6V · Functionality and operations comply with the DDR3 SDRAM datasheet · 8 internal banks · Data transfer rates: PC3-10600, PC3-8500, or PC3-6400 · Bi-directional Differential Data Strobe · 8 bit pre-fetch · Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4 · On Die Termination (ODT) supported · RoHS compliant * This product is in compliance with the RoHS directive. Ordering Information Part Number HMT164S6BFR6C-G7/H9 HMT112S6BFR6C-G7/H9 HMT125S6BFR8C-G7/H9 Density 512MB 1GB 2GB Organization 64Mx64 128Mx64 256Mx64 Component Composition 64Mx16(H5TQ1G63BFR)*4 64Mx16(H5TQ1G63BFR)*8 128Mx8(H5TQ1G83BFR)*16 # of ranks 1 2 2 Rev. 1.0 / Jul. 2010 3 Key Parameters MT/s DDR3-1066 DDR3-1333 Grade -G7 -H9 tCK (ns) 1.875 1.5 CAS Latency (tCK) 7 9 tRCD (ns) 13.125 13.5 tRP (ns) 13.125 13.5 tRAS (ns) 37.5 36 tRC (ns) 50.625 49.5 CL-tRCD-tRP 7-7-7 9-9-9 Speed Grade Frequency [MHz] Grade CL5 -G7 -H9 667 667 CL6 800 800 CL7 1066 1066 CL8 1066 1066 1333 1333 CL9 CL10 Remark Address Table 512MB(1Rx16) Refresh Method Row Address Column Address Bank Address Page Size 8K/64ms A0-A12 A0-A9 BA0-BA2 2KB 1GB(2Rx16) 8K/64ms A0-A12 A0-A9 BA0-BA2 2KB 2GB(1Rx8) 8K/64ms A0-A13 A0-A9 BA0-BA2 1KB Rev. 1.0 / Jul. 2010 4 Pin Descriptions Pin Name CK[1:0] CK[1:0] CKE[1:0] RAS CAS WE S[1:0] A[9:0],A11, A[15:13] A10/AP A12/BC BA[2:0] ODT[1:0] SCL SDA SA[1:0] Description Clock Input, positive line Clock Input, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge Address Input/Burst chop SDRAM Bank Addresses On Die Termination Inputs Serial Presence Detect (SPD) Clock Input SPD Data Input/Output SPD Address Inputs Num ber 2 2 2 1 1 1 2 14 1 1 3 2 1 1 2 VREFDQ VREFCA VTT VDDSPD NC Input/Output Reference Termination Voltage SPD Power Reserved for future use 1 1 2 1 2 Total: 204 Pin Name DQ[63:0] DM[7:0] DQS[7:0] DQS[7:0] EVENT TEST RESET VDD VSS Description Data Input/Output Data Mask