CHANGJIANG 3DD13002 free download

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTORЈЁNPN Ј© TOЎЄ 126 FEATURES Power dissipation PCM : 1.25 WЈЁ Tamb=25ЎжЈ© 1.BASE Collector current ICM : 1 A 2.COLLECTOR Collector-base voltage 3.EMITTER 123 V(BR)CBO : 600 V Operating and storage junction temperature range T J Ј¬ T stg: -55Ўжto +150Ўж ELECTRICAL CHARACTERISTICSЈЁ Tamb=25Ўж unless otherwise specifiedЈ© Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100¦МAЈ¬IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mAЈ¬ IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100¦МAЈ¬IC=0 6 V Collector cut-off current ICBO VCB= 600 VЈ¬IE=0 100 µA Emitter cut-off current IEBO VEB= 6 VЈ¬IC=0 100 µA hFEЈЁЈ© 1 VCE= 10 V, IC= 250 µA 5 DC current gain hFEЈЁЈ© 2 VCE= 10 V, IC= 200 m A 9 40 Collector-emitter saturation voltage VCE(sat) IC=200m A, IB= 40 m A 0.8 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40 m A 1.1 V VCE=10V, Ic=100mA Transition frequency fT 5 MHz f =1MHz Fall time tf IC=1A, I 1=-IB2=0.2A B 0.5 µs Storage time ts VCC=100V 2.5 µs CLASSIFICATION OF h FE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 TO-126 PACKAGE OUTLINE DIMENSI