RENESAS 2SJ550 (L,S) free download

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2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features · Low on-resistance RDS (on) = 0.075 typ. · Low drive current. · 4 V gate drive devices. · High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D G 1 1 2 3 S 2 3 Rev.3.00 Sep 07, 2005 page 1 of 8 2SJ550(L), 2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50 Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value ­60 ±20 ­15 ­60 ­15 ­15 19 50 150 ­55 to +150 Unit V V A A A A mJ W °C °C IAP Note 3 EAR Pch Tch Note 2 Note 3 Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min ­60 ±20 -- -- ­1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 ­1.1 70 Max -- -- ­10 ±10 ­2.0 0.095 0.155 -- -- -- -- -- -- -- -- -- -- Unit V V µA µA V S pF pF pF ns ns ns ns V ns Test Conditions ID = ­10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = ­60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = ­1 mA, VDS = ­10 V Note 4 ID = ­8 A, VGS = ­10 V ID = ­8 A, VGS = ­4 V Note 4 ID = ­8 A, VDS = ­10 V VDS = ­10 V VGS = 0 f = 1 MHz VGS = ­10 V ID = ­8 A RL = 3.75 IF = ­15 A, VGS = 0 IF = ­15 A, VGS = 0 diF/dt = 50 A/µs Note 4 Rev.3.00 Sep 07, 2005 page 2 of 8 2SJ550(L), 2SJ550(S) Main Characteristics Power vs. Temperature Derating 80 1000 300 Maximum Safe Operation Area Pch (W) ID (A) 60 100 30 10 3 1 0.3 PW 10 µs 0 µs 1 =1 m s 0m Op s( era 1s tio ho n( t) Tc Operation in =2 this area is 5° C) limited by RDS (on) 10 Channel Dissipation Drain Current 40 DC 20 Ta = 25°C 0 0 50 100 150 200 0.1 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics ­20 ­10 V ­6 V ­20 ­4 V Pulse Test ­3.5 V ­12 Typical Transfer Characteristics VDS = ­10 V Pulse Test ID (A) ­16 ID (A) Drain Current ­16 ­12 Drain Current ­8 ­3 V ­8 25°C ­4 Tc = 75°C ­25°C ­4 VGS = ­2.5 V 0 0 ­2 ­4 ­6 ­8 ­10 0 0 ­1 ­2 ­3 ­4 ­5