Keithley TP0610 free download

File name TP0610.pdf

Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor Low power drive requirement utilizes a vertical DMOS structure and Supertex's well-proven Ease of paralleling silicon-gate manufacturing process. This combination produces a Low CISS and fast switching speeds device with the power handling capabilities of bipolar transistors Excellent thermal stability and with the high input impedance and positive temperature Integral source-drain diode coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- Free from secondary breakdown induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide range Logic level interfaces - ideal for TTL and CMOS of switching and amplifying applications where very low threshold Solid state relays voltage, high breakdown voltage, high input impedance, low input Battery operated systems capacitance, and fast switching speeds are desired. Photo voltaic systems Analog switches Power management Telecom switches Ordering Information Package Options RDS(ON) ID(ON) BVDSS/BVDGS Device (max) (min) TO-236AB (SOT-23) (V) () (mA) TP0610T