Tektronix 1966SC free download

File name 1966SC.pdf

/ USEFUL INFORMATION FOR USERS OF TEKTRONIX INSTRUMENTS NUMBER 3 6 PRINTED IN U.5.A FEBRUARY 1966 (Unipolar Transistors) by Nelson Hibbs, Instructor Tektronix Product Manufacturing Training Departmenf At lasf w e have eulzat a ~ ~ l o z t t~ ~a s o t F E T is a single-junction wbjority-cczrrir~ As with conventional tr;insistors, which backward vacztu~il tube-a p-clza~zlrcl tlevice while the n-p-n and 1)-n-p transistors are represented by two types of devices F E T . In tlzis device, electron cztrregzt a r e double-junction ~ili~~oriiy-carrier devices. (n-1)-n and p-n-p), tlie FET is also repre- goes f r o m draitz (plate) t o sozr~cc F E T manufacturers have settled on a sented by two types of tlcvices. These a r e (cathode). new series of names for the three basic designated tlie n-channel and the p-channel leads of this device; so, once again we en- types of devices (see Figure 2 ) . The Field Effect Transistor ( F E T ) is ;L counter a cl~angein terminology. Figure 1 T h e electron in "n" rnaterial has a faster compar;itively new device whose operation compares an F E T , a convention;d transistor differs radically from the more familiar mobility th:m the hole in "p" material. and the familiar vacuum-tube triode to s h o ~ v n-p-n and p-n-p types of transistors. T h e Thus, the n-p-n transistor has :i faster this change in basic-lead terminology. ~iiol)ilityt11:~n the p-11-p transistor and conse- quently a higher f requency response. A similar condition exists with the new FET's. T h e 11-channel F E T promises a greater fre- quency respons