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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412

Devices Qualified Level
JAN
2N3846 2N3847 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N3846 2N3847 Units
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 300 400 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Collector Current IC 20 Adc
Total Power Dissipation @ TA = +250C (1) 4.0 W
PT
@ TC = +1000C (2) 150 W
Operating & Storage Temperature Range 0
Top, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit TO-63*
Thermal Resistance, Junction-to-Case 0
RJC 0.5 C/W
1) Derate linearly 26.6 mW/0C to +1750C
2) Derate linearly 2 W/0C to +1750C
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; IB = 0 2N3846 V(BR)CEO 200 Vdc
2N3847 300
Collector-Emitter Cutoff Current
VCE = 300 Vdc; VBE = 0 2N3846 ICES 2 mAdc
VCE = 400 Vdc; VBE = 0 2N3847 2
Collector-Emitter Cutoff Current
VCE = 200 Vdc; IB = 0 2N3846 ICEO 5 mAdc
VCE = 300 Vdc; IB = 0 2N3847 5
Emitter-Base Cutoff Current
IEBO