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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS25A
NPN 5 GHz wideband transistor
Product specification December 1997
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
FEATURES PINNING
Low current consumption PIN DESCRIPTION
Low noise figure Code: N6
Gold metallization ensures 1 base handbook, 2 columns 3
excellent reliability
2 emitter
SOT323 envelope.
3 collector
DESCRIPTION 1 2
NPN transistor in a plastic SOT323 Top view MBC870
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
Fig.1 SOT323.
phones with signal frequencies up to
2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
IC DC collector current 6.5 mA
Ptot total power dissipation up to Ts = 170 C; note 1 32 mW
hFE DC current gain IC = 0.5 mA; VCE = 1 V; Tj = 25 C 50 80 200
fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; 3.5 5 GHz
Tamb = 25 C
GUM maximum unilateral power gain Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; 13 dB
Tamb = 25 C
F noise figure Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; 1.8 dB
Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 6.5 mA
Ptot total power dissipation up to Ts = 170 C; note 1 32 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
December 1997 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 170 C; note 1 190 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
Cre feedback capacitance IC = 0; VCB = 1 V; f = 1 MHz 0.3 0.45 pF
fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; 3.5 5 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 0.5 mA; VCE = 1 V; f = 1 GHz; 13 dB
gain (note 1) Tamb = 25 C
F noise figure s = opt; IC = 0.5 mA; VCE = 1 V; f = 1 GHz; 1.8 dB
Tamb = 25 C
s = opt; IC = 1 mA; VCE = 1 V; 2 dB
f = 1 GHz; Tamb = 25 C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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1