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SEMICONDUCTOR KTA1023
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
B D
FEATURE
Complementary to KTC1027.
A
P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
G
MAXIMUM RATING (Ta=25 ) Q
S
D 2.50 MAX
K E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
J
R
G 1.70 MAX
Collector-Base Voltage VCBO -120 V F F H 0.55 MAX
J _
14.00 + 0.50
Collector-Emitter Voltage VCEO -120 V H H H
K 0.35 MIN
L _
0.75 + 0.10
Emitter-Base Voltage VEBO -5 V M E M M 4
N 25
Collector Current IC -800 mA O 1.25
D
1 2 3 L
O
H P 1.50
IE Q 0.10 MAX
Emitter Current 800 mA N N
_
R 12.50 + 0.50
1. EMITTER
S 1.00
Collector Power Dissipation PC 1 W
2. COLLECTOR
Junction Temperature Tj 150 3. BASE
Storage Temperature Range Tstg -55 150
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Saturation Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V
Emitter-Base Breakdwon Voltage V(BR)EBO IE=-1mA, IC=0 -5 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 80 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-5V, IC=-100mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 40 pF
Note : hFE Classification O:80 160, Y:120 240
1997. 6. 24 Revision No : 1 1/2
KTA1023
1997. 6. 24 Revision No : 1 2/2