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MMDT2227
NPN-PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
* Features
o
.055(1.40) 8
.047(1.20) 0
o
.026TYP
Power dissipation (0.65TYP)
PCM : 0.2 W (Tamp.= 25 C)
O
.021REF
(0.525)REF
Collector current
ICM : 0.2/-0.2 A .096(2.45) .053(1.35)
.085(2.15) .045(1.15)
Collector-base voltage
V(BR)CBO : 75/-60 V
.018(0.46)
Operating & Storage junction Temperature .010(0.26)
.014(0.35) .006(0.15)
Tj, Tstg : -55 C~ +150 C
O O
.006(0.15) .003(0.08)
.087(2.20)
.079(2.00) .004(0.10)
.000(0.00)
C2 B1 E1
.043(1.10) .039(1.00)
.035(0.90) .035(0.90)
E2 B2 C1
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 O C unless otherwise specified)
NPN2222A ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=10A,IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V
Collector cut-off current ICBO VCB=60V,IE=0 10 nA
Emitter cut-off current IEBO VEB=3V,IC=0 10 nA
DC current gain hFE VCE=10V,IC=150mA 100 300
VCE(sat)1 IC=150mA,IB=15mA 0.3 V
Collector-emitter saturation voltage
VCE(sat)2 IC=500mA,IB=50mA 1 V
VBE(sat)1 IC=150mA,IB=15mA 1.2 V
Base -emitter saturation voltage
VBE(sat)2 IC=500mA,IB=50mA 2 V
Transition frequency fT VCE=20V,IC=20mA,f=100MHz 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF
VCE=10V,Ic=0.1mA,
Noise Figure NF 4 dB
f=1KHZ,Rs=1K
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jan-2006 Rev. B Page 1 of 6
MMDT2227
NPN-PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
PNP2907A ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA
Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA
DC current gain hFE VCE=-10V,IC=-150mA 100 300
VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500mA,IB=-50mA -1.6 V
VBE(sat)1 IC=-150mA,IB=-15mA -1.3 V
Base -emitter saturation voltage
VBE(sat)2 IC=-500mA,IB=-50mA -2.6 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 8 pF
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V + 30 V
1.0 to 100