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CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D D
20V, 6.5A, RDS(ON) = 23m @VGS = 4.5V.
RDS(ON) = 34m @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON). *1K *1K
G1 G2
High power and current handing capability.
Lead free product is acquired.
S1 S2
*Typical value by design
D D D D
8 7 6 5
Bottom View
1 2 3 4
DFN3*3
S1 G S2 G
1 2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS