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Preliminary Technical Information

TrenchMVTM IXTA160N10T VDSS = 100 V
Power MOSFET IXTP160N10T ID25 = 160 A
RDS(on) 7.0 m
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)

G
S
Symbol Test Conditions Maximum Ratings
(TAB)
V DSS TJ = 25