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PSMN1R5-25YL
N-channel TrenchMOS logic level FET
Rev. 01 -- 16 June 2009 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.

1.2 Features and benefits
High efficiency due to low switching Suitable for logic level gate drive
and conduction losses sources

1.3 Applications
Class-D amplifiers Motor control
DC-to-DC converters Server power supplies

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25