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B772
Transistor(PNP)

1. BASE

2. COLLECTOR TO-252-2L

3. EMITTER

Features
Low speed switching

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.25 W
RJA Thermal Resistance, junction to Ambient 100 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A,IC=0 -6 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 A
Collector cut-off current ICEO VCE=-30V, IB=0 -10 A
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 A
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V
VCE= -5V, IC=-0.1A
Transition frequency fT 50 80 MHz
f =10MHz

CLASSIFICATION OF hFE
Rank R O Y GR

Range 60-120 100-200 160-320 200-400
B772
Transistor(PNP)

Typical characteristics