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BU208A/508A/508AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPES
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s JEDEC TO-3 METAL CASE. TO-3

APPLICATIONS: 1
s HORIZONTAL DEFLECTION FOR COLOUR 2
TV

DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa 3
3
technology for cost-effective high performance 2 2
and uses a Hollow Emitter structure to enhance TO-218 1 ISOWATT218 1
switching speeds.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-Emitter Voltage (V BE = 0) 1500 V
V CEO Collector-Emitter Voltage (I B = 0) 700 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 8 A
I CM Collector Peak Current (tp < 5 ms) 15 A
TO - 3 T O - 218 ISOW ATT 218
o
P t ot Total Dissipation at T c = 25 C 150 125 50 W
o
T stg St orage Temperature -65 to 150 -65 to 150 -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 150 150 C

June 1996 1/8
BU208A/508A/508AFI

THERMAL DATA
T O-3 TO-218 ISO WATT218
o
R t hj-ca se Thermal Resistance Junction-case Max 1 1 2.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
o
I CES Collector Cut-off V CE = 1500 V T C = 125 C 1 mA
Current (V BE = 0) V CE = 1500 V 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 100