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STD4NS25
N-CHANNEL 250V - 0.9 - 4A DPAK/IPAK
MESH OVERLAYTM MOSFET
TYPE VDSS RDS(on) ID
STD4NS25 250 V < 1.1 4A
s TYPICAL RDS(on) = 0.9
s EXTREMELY HIGH dv/dt CAPABILITY 3
3 2
s 100% AVALANCHE TESTED
1
s ADD SUFFIX "T4" FOR ORDERING IN TAPE & 1
REEL
DPAK IPAK
DESCRIPTION TO-252 TO-251
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage