Text preview for : AP85t03gh.pdf part of . Electronic Components Datasheets AP85t03gh . Electronic Components Datasheets Various AP85t03gh.pdf
Back to : AP85t03gh.pdf | Home
AP85T03GH/J
RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Low Gate Charge D BVDSS 30V
Simple Drive Requirement RDS(ON) 6m
Fast Switching ID 75A
G
S
Description G D
S
The TO-252 package is widely preferred for all commercial-industrial TO-252(H)
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G
D
S TO-251(J)
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 75 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 55 A
1
IDM Pulsed Drain Current 350 A
PD@TC=25 Total Power Dissipation 107 W
Linear Derating Factor 0.7 W/
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W
Data & specifications subject to change without notice 1
200810235
AP85T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=45A - - 6 m
VGS=4.5V, ID=30A - - 10 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 55 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=175 C) VDS=24V, VGS=0V - - 500 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=30A - 33 52 nC
Qgs Gate-Source Charge VDS=24V - 8 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 24 nC
Qoss Output Charge VDD=15V,VGS=0V - 24.5 39 nC
2
td(on) Turn-on Delay Time VDS=15V - 11 - ns
tr Rise Time ID=30A - 77 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=10V - 35 - ns
tf Fall Time RD=0.5 - 67 - ns
Ciss Input Capacitance VGS=0V - 2700 4200 pF
Coss Output Capacitance VDS=25V - 550 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=30A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/