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SEMICONDUCTOR KTC4080E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
FEATURES B
Small Reverse Transfer Capacitance DIM MILLIMETERS
A _
1.60 + 0.10
D
: Cre=0.7pF(Typ.) 2 B _
0.85 + 0.10
G
_
A
C 0.70 + 0.10
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). 3
H
1 D 0.27+0.10/-0.05
E _
1.60 + 0.10
G _
1.00 + 0.10
H 0.50
J _
0.13 + 0.05
MAXIMUM RATING (Ta=25 ) J
C
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
1. EMITTER
Collector-Emitter Voltage VCEO 30 V
2. BASE
Emitter-Base Voltage VEBO 4 V 3. COLLECTOR
Collector Current IC 20 mA
Emitter Current IE -20 mA
Collector Power Dissipation PC 100 mW ESM
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
Type Name
Q h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=18V, IE=0 - - 0.5 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.5 A
DC Current Gain hFE(Note) VCE=6V, IC=1mA 40 - 200
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz - 0.7 - pF
Transition Frequency fT VCE=6V, IC=1mA 300 550 - MHz
Collector-Base Time Constant CC rbb '
VCB=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF VCC=6V, IE=-1mA - 2.5 5.0
dB
Power Gain Gpe f=100MHz (Fig.) 15 18 -
Note : hFE Classification R(1):40 80 , O(2):70 140 , Y(4):100 200
2001. 12. 28 Revision No : 1 1/6
KTC4080E
Fig. Gpe TEST CIRCUIT
6pF
OUTPUT
R L=50
0.01