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STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
STE53NA50 500 V < 0.085 53 A
s TYPICAL RDS(on) = 0.075
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case) ISOTOP
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 500 V
V DGR Drain- gate Voltage (R GS = 20 k) 500 V
V GS Gate-source Voltage