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2SC4116
General Purpose Transistor COLLECTOR
NPN Silicon 3
3
P b Lead(Pb)-Free 1 1
BASE 2
2
FEATURES EMITTER SOT-323(SC-70)
* High voltage and high current
* Excellent h FE linearity
* High h FE
* Low noise
* Complementary to 2SA1586
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 150 mA
Collector Power Dissipation PC 100 mW
Junction Temperature TJ 150
Junction and Storage Temperature Tstg -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 - - V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 - - V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 - - V
Collector cut-off current ICBO VCB=60V,IE=0 - - 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 - - 0.1 A
DC current gain hFE VCE=6V,IC=2mA 70 - 700
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA - - 0.25 V
Transition frequency fT VCE=10V,IC=1mA, 80 - - MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz - - 3.5 pF
VCE=6V,Ic=0.1mA,
Noise figure NF - - 10 dB
f=1KHZ,Rg=10K
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking LO LY LG LL
W E IT R O N 1/3 25-Jun-08
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2SC4116 WEITRON
W E IT R O N 2/3 25-Jun-08
h t t p : / / w w w . w e i t r o n . c o m . tw
2SC4116 WEITRON
WEIT R ON 3/3 25-Jun-08
h tt p :// w w w . w eit r o n . c o m . tw
