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BC307/308/309(PNP)
TO-92 Bipolar Transistors
1. COLLECTOR TO-92
2. BASE
3. EMITTER
Features
Amplifier dissipation NPN Silicon
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Collector-Emitter Voltage BC307 -45
VCEO V
BC308/309 -25
Emitter-Base Voltage BC307 -6
VEBO V
BC308/309 -5
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 500 mW Dimensions in inches and (millimeters)
Thermal Resistance,
RJA 357 /W
Junction to Ambient
RJC Thermal Resistance, Junction to Case 125 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
IC=-10A, IE=0 BC307 -50
Collector-base breakdown voltage V(BR)CBO V
BC308/309 -30
IC=-2mA, IB=0 BC307 -45
Collector-emitter breakdown voltage V(BR)CEO V
BC308/309 -25
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
VCB=-45V,IE=0 BC307
Collector cut-off current ICBO -15 nA
VCB=-25V,IE=0 BC308/309
Emitter cut-off current IEBO VEB=-5V, IC=0 -15 nA
DC current gain hFE VCE=-5V, IC=-2mA 120 800
IC=-10mA, IB=-0.5mA -0.3 V
Collector-emitter saturation voltage VCE(sat)
IC=-100mA, IB=-5mA -0.6 V
IC=-10mA, IB=-0.5mA -0.75 V
Base-emitter saturation voltage VBE(sat)
IC=-100mA, IB=-5mA -1 V
Base-emitter voltage VBE VCE=-5V, IC=-2mA -0.55 -0.75 V
Transition frequency fT VCE=-5V, IC=-10mA, f=50MHz 130 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 6 pF
VCE=-5V, IC=-0.2mA ,
f=1KHz, RG=2K BC307/BC308 10
Noise figure NF BC309 4 dB
VCE=-5V, IC=-0.2mA ,
f=30-15KHz, RG=2K BC309 4
CLASSIFICATION OF hFE
Rank A B C
Range 120-220 180-460 380-800
BC307/308/309(PNP)
TO-92 Bipolar Transistors
Typical Characteristics