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SEMICONDUCTOR KTX103E
TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
B
FEATURES B1
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
1 6 DIM MILLIMETERS
C
Simplify circuit design. A _
1.6 + 0.05
A1
_
A
Reduce a quantity of parts and manufacturing process. A1 1.0 + 0.05
2 5 _
C
B 1.6 + 0.05
B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
EQUIVALENT CIRCUIT (TOP VIEW) P P
P 5
6 5 4 Marking
H
J
6 5 4
Lot No.
1. Q1 EMITTER
Q1 Q2 2. Q1 BASE
Type Name
D7 3.
4.
5.
6.
Q2
Q2
Q2
Q1
COLLECTOR
EMITTER
BASE
COLLECTOR
1 2 3
1 2 3
TES6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 500
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC -500
Q1 , Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 2 1/4
KTX103E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=-10 A -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - -100 -250 mV
Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF
2008. 9. 23 Revision No : 2 2/4
KTX103E
Q1 (NPN TRANSISTOR)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1K 1K
I C /IB =20
Ta=125 C 500
500 Ta=25 C 300
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (mV)
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1K 10K
COLLECTOR-EMITTER SATURATION
Ta=25 C I C /IB =20
BASE-EMITTER SATURATION
500
300 5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
3K
100
50
30 1K Ta=-40 C
I C /IB =50
10 I C /I B =20 500 Ta=25 C 5 C
10 Ta=12
5 I C/I B = 300
3
1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE
1K
VCE =2V
COLLECTOR CURRENT I C (mA)
500
300
100
50
25 C
5 C
40 C
30
Ta=2
Ta=1
Ta=-
10
5
3
1
0 0.5 1.0 1.5
BASE-EMITTER VOLTAGE VBE (V)
2008. 9. 23 Revision No : 2 3/4
KTX103E
Q2 (PNP TRANSISTOR)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1K -1K
I C /IB =20
Ta=125 C -500
500
DC CURRENT GAIN h FE
Ta=25 C -300
VOLTAGE VCE(sat) (mV)
300
Ta=-40 C
-100
C
-50 125
Ta=
100 -30
25 C C
Ta= =-40
50 Ta
-10
30 -5
-3
VCE =-2V
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
-1K -10K
COLLECTOR-EMITTER SATURATION
Ta=25 C I C /IB =20
BASE-EMITTER SATURATION
-500
-300 -5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
-3K
-100
-50 I C /IB =50
-30 -1K Ta=-40 C
I C /IB =20
I C /IB =10
-10 -500 Ta=25 C C
Ta=125
-5 -300
-3
-1 -100
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I C - V BE
-1K
VCE =-2V
COLLECTOR CURRENT I C (mA)
-500
-300
-100
-50
25 C
5 C
40 C
-30
Ta=1
Ta=2
Ta=-
-10
-5
-3
-1
0 -0.5 -1.0 -1.5
BASE-EMITTER VOLTAGE VBE (V)
2008. 9. 23 Revision No : 2 4/4
