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2SD1802(NPN)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Adoption of FBET,MBIT processes
Large current capacity and wide ASO
Low collector-to-emitter saturation voltage
Fast switching speed
TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current