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BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 -- 18 February 2009 Product data sheet




1. Product profile

1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.

1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors

1.3 Applications
I General-purpose switching and amplification

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 45 V
IC collector current - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 200 - 450


2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1

5 base TR2 1 2 3
1 2 3
6 collector TR1
sym019
NXP Semiconductors BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor



3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363


4. Marking
Table 4. Marking codes
Type number Marking code[1]
BC847BPN 13*

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China


5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5 V
IC collector current - 100 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 200 mA
tp 1 ms
Ptot total power dissipation Tamb 25