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STGW50NB60H
N-CHANNEL 50A - 600V - TO-247
PowerMESHTM IGBT

TYPE VCES VCE(sat) (Max) IC

STGW50NB60H 600 V < 2.8 V 50 A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s VERY HIGH FREQUENCY OPERATION 2
1
s OFF LOSSES INCLUDE TAIL CURRENT

TO-247
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de- INTERNAL SCHEMATIC DIAGRAM
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized to
achieve very low switching times for high frequency
applications (<120KHz).

APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS

s WELDING EQUIPMENTS

s SMPS AND PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collettor Voltage 20 V
VGE Gate-Emitter Voltage