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SEMICONDUCTOR KTC4527F
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA A C
DIM MILLIMETERS
F
U
A 10.30 MAX
P
E B 15.30 MAX
C 2.70 0.30
B
S D 0.85 MAX
MAXIMUM RATING (Ta=25 )
G
E 3.20 0.20
F 3.00 0.30
CHARACTERISTIC SYMBOL RATING UNIT G 12.30 MAX
T R H 0.75 MAX
Collector-Base Voltage VCBO 1100 V L L J 13.60 0.50
K
K 3.90 MAX
Collector-Emitter Voltage VCEO 800 V M
L 1.20
V M 1.30
J
Emitter-Base Voltage VEBO 7 V D D N 2.54
O 4.50 0.20
DC IC 3 P 6.80
Q 2.60 0.20
Collector Current A N N
ICP R 10
Pulse 10 H
S 25
T T
T 5
Base Current IB 1.5 A
U 0.5
Collector Power Dissipation V 2.60 0.15
O
1 2 3
PC 40 W
Q
1. BASE
(Tc=25 ) 2. COLLECTOR
3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=800V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
IC=1.5A, IB1=-IB2=0.3A
Collector-Emitter Sustaning Voltage VCEX(SUS) 800 - - V
L=2mH, Clamped
Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 2 V
Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A - - 1.5 V
hFE (1) (Note) VCE=5V, IC=0.2A 15 - 40
DC Current Gain
hFE (2) VCE=5V, IC=1A 8 - -
Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 1100 - - V
Collector-Emitter Breakdown Voltage BVCEO IC=5mA, RBE= 800 - - V
Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 - - V
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 60 - pF
Transition Frequency fT VCE=10V, IC=0.2A - 15 - MHz
Turn On Time ton OUTPUT - - 0.5
20