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BUL87
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s LOW BASE-DRIVE REQUIREMENTS
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERISED AT 125oC
APPLICATIONS: 3
s ELECTRONIC TRANSFORMER FOR 2
1
HALOGEN LAMPS
s SWITCH MODE POWER SUPPLIES
TO-220
DESCRIPTION
The BUL87 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 12 A
ICM Collector Peak Current (t p < 5 ms) 24 A
IB Base Current 4 A
I BM Base Peak Current (t p < 5 ms) 8 A
Pt ot Tot al Dissipation at T c = 25 o C 110 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
September 1997 1/6
BUL87
THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-Case Max 1.14 C/W
o
Rt hj-amb Thermal Resistance Junction-Ambient Max 62.5 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collecto r Cut-of f VCE = 700 V 100