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STC5NF20V
N-channel 20V - 0.030 - 5A - TSSOP8
2.7V-drive STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) ID
< 0.040 (@ 4.5 V)
STC5NF20V 20V 5A
< 0.045 (@ 2.7 V)
Ultra low threshold gate drive (2.7V)
Standard outline for easy automated surface
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mount assembly TSSOP8
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Application
Switching applications
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Description
Figure 1.
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Internal schematic diagram
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This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
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strip-based process. The resulting transistor
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shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
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remarkable manufacturing reproducibility.
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Table 1. Device summary
Order code Marking Package Packaging
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STC5NF20V 5N20V TSSOP8 Tape & reel
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October 2007 Rev 6 1/12
www.st.com 12
Contents STC5NF20V
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STC5NF20V Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 20 V
VDGR Drain-gate voltage (RGS = 20K) 20 V
VGS Gate-source voltage