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Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)
MAXIMUM RATINGS
Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit
(BC856A,B) (BC857A,B,C) (BC858A,B,C)
Collector-Emitter Voltage
VCEO -65 -45 -30 Vdc
Collector-Base Voltage
VCBO -80 -50 -30 Vdc
Emitter-Base Voltage
VEBO -5.0 -5.0 -5.0 Vdc
Collector Current Continuous
Ic -100 -100 -100 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD
225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation PD 300 mW
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM856A(BC856A)=3A;GM856B(BC856B)=3B;
GM856A(BC856A)=3A;GM856B(BC856B)
(BC856A)=3A;GM856B (BC856B)=3B;
GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G
GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G
(BC857A)=3E;GM857B (BC857B)=3F;GM857 C(BC857C)=3
GM858A(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)=3L
GM858A(BC858A)
(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)
(BC858B)=3K;GM858C (BC858C)=3L
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
=25 )
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
856A,B -65
857A,B,C -45
(Ic=-10mAdc,IB=0)
858A,B,C -30 -- Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
856A,B -80
857A,B,C -50
(Ic=-10Adc,IE=0)
858A,B,C -30 -- Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
856A,B -5.0
857A,B,C -5.0
(IE=-10Adc,Ic=0)
858A,B,C -5.0 -- Vdc
Collector Cutoff Current
(VCB=-30v) ICBO -15 nA
(VcB=-30Vdc,TA=150) -- -4.0 uA
ON CHARCTERISTICS
Characteristic Symbol Min Typ Max Unit
DC Current Gain HFE --
856A, 857A, 858A 90
(Ic=-10uAdc,VCE=-5.0Vdc) 856B, 857B, 858B 150 --
857C,858C 270
856A, 857A, 858A 125 180 250
(Ic=-2.0mAdc,VCE=-5.0Vdc) 856B, 857B, 858B 220 290 475
857C,858C 420 520 800
Collector-Emitter Saturation Voltage
VCE(sat)
(Ic=-10mAdc, IB=-0.5mAdc) -- -0.3
(Ic=-100mAdc, IB=-5.0mAdc) -- -0.65 Vdc
Base-Emitter Saturation Voltage
VBE(sat)
(Ic=-10mAdc, IB=-0.5mAdc) -0.7
(Ic=-100mAdc, IB=-5.0mAdc) -0.9 Vdc
Base-Emitter Voltage
(Ic=-2.0mAdc, VCE=-5.0Vdc) VBE(on) -0.6 -- -0.75
(Ic=-10mAdc, VCE=-5.0Vdc) -- -- -0.82 V
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858( BC856,857,858)
SMALL-SIGNAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Current-Gain-Bandwidth Product
- fT 100 -- -- MHz
(Ic=-10mAdc,VCE=-5.0Vdc,f=100MHz)
Output Capacitance
Cobo -- -- 4.5 pF
(VCB=-10Vdc, IE=0, f=1.0MHz)
Noise Figure
(VCE=-5.0Vdc, IC=-200Adc, NF -- -- 10 dB
Rs=2.0kf=1.0KHz BW=200Hz)
DIMENSION
(UNIT)mm