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STP2N80
STP2N80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STP2N80 800 V <7 2.4 A
STP2N80FI 800 V <7 1.5 A

s TYPICAL RDS(on) = 5
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW INPUT CAPACITANCE 2 2
1 1
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION TO-220 ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP2N80 STP2N80FI
V DS Drain-source Voltage (V GS = 0) 800 V
V DGR Drain- gate Voltage (R GS = 20 k) 800 V
V GS Gate-source Voltage