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SI2302DS
N-channel enhancement mode field-effect transistor
M3D088
Rev. 02 -- 20 November 2001 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.
Product availability:
SI2302DS in SOT23.
2. Features
s TrenchMOSTM technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3
d
2 source (s)
3 drain (d)
g
1 2
MBB076 s
Top view MSB003
SOT23
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150