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AP9916H/J
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Low on-resistance D BVDSS 18V
Capable of 2.5V gate drive RDS(ON) 25m
Low drive current
G
ID 35A
Single Drive Requirement
S
Description
The Advanced Power MOSFETs from APEC provide the G
D
S TO-252(H)
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S TO-251(J)
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 18 V
VGS Gate-Source Voltage