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SEMICONDUCTOR KTD2058
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
S
F
Low Saturation Voltage A _
10.0 + 0.3
P
B _
15.0 + 0.3
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E
C _
2.70 + 0.3
B
Complementary to KTB1366. D 0.76+0.09/-0.05
G
E _
3.2 + 0.2
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
R
K
K _
3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO 60 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO 60 V S 0.5 Typ
Emitter-Base Voltage VEBO 7 V
Collector Current IC 3 A 1 2 3 1. BASE
Q
2. COLLECTOR
Base Current IB 0.5 A
3. EMITTER
Collector Power Ta=25 2
PC W
Dissipation Tc=25 25 TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 1 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 60 - - V
DC Current Gain hFE (Note) VCE=5V, IC=0.5A 60 - 200
Collector Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.25 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=0.5A - 0.7 1.0 V
Transition Frequency fT VCE=5V, IC=0.5A - 3.0 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
OUTPUT
Turn-on Time ton 20