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KTA1663
SOT-89 Transistor(PNP)
1. BASE
1
2. COLLECTOR SOT-89
2 4.6
4.4
B
3. EMITTER 1.6
1.8
3 1.4 1.4
Features 2.6 4.25
2.4 3.75
High current applications
0.8
MIN
Complementary to KTC4375 0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V
Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC=-0.5A 100 320
Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-30mA -2 V
Base-emitter voltage VBE VCE=-2V, IC=-0.5A -1 V
Transition frequency fT VCE=-2V, IC=-500mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0,f=1MHz 50 MHz
CLASSIFICATION OF hFE
Rank O Y
Range 100-200 160-320
KTA1663
SOT-89 Transistor(PNP)
Typical Characteristics