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SEMICONDUCTOR KF80N08P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF80N08P
It s mainly suitable for low voltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _
0.8 + 0.1
E _
3.6 + 0.2
VDSS= 75V, ID= 80A K _
P F 2.8 + 0.1
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)=10m (Max.) @VGS = 10V J I 1.5
D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
RATING O _
4.5 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
KF80N08P KF80N08F 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 80 56
ID
Drain Current @TC=100 76 39 A
KF80N08F
Pulsed (Note1) IDP 320 224
A C
Single Pulsed Avalanche Energy EAS 1200 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 18 mJ
(Note 1) E DIM MILLIMETERS
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
Tc=25 230 62.5 W D _
0.8 + 0.1
Drain Power
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 1.54 0.42 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
Tj L
Maximum Junction Temperature 175 M
R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 175 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
RthJC N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case 0.65 2.4 /W
O _
6.68 + 0.2
Thermal Resistance, Q _
4.7 + 0.2
RthJA 62.5 62.5 /W 1. GATE
R _
2.76 + 0.2
Junction-to-Ambient 1 2 3 2. DRAIN
Q
3. SOURCE
* : Drain current limited by maximum junction temperature.
TO-220IS (1)
PIN CONNECTION
D
G
S
2008. 6. 19 Revision No : 0 1/7
KF80N08P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 75 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.11 - V/
Drain Cut-off Current IDSS VDS=75V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=40A - 8.5 10.0 m
Dynamic
Total Gate Charge Qg - 107 -
VDS=60V, ID=80A
Gate-Source Charge Qgs - 20 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 47 -
Turn-on Delay time td(on) - 63 -
VDD=37.5V
Turn-on Rise time tr - 228 -
ID=80A ns
Turn-off Delay time td(off) - 217 -
RG=25 (Note4,5)
Turn-off Fall time tf - 150 -
Input Capacitance Ciss - 3860 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 840 - pF
Reverse Transfer Capacitance Crss - 175 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 80
VGS Pulsed Source Current ISP - - 320
Diode Forward Voltage VSD IS=80A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=80A, VGS=0V, - 114 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 610 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =138 H, IS=80A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1 1
KF80N08 KF80N08
P 701 2 F 713 2
1 PRODUCT NAME
2 LOT NO
2008. 6. 19 Revision No : 0 2/7
KF80N08P/F
Fig1. ID - VDS Fig2. ID - VGS
1000 1000
VDS = 15V
VGS=8V, 10V
Drain Current ID (A)
Drain Current ID (A)
VGS=7V
100 100
VGS=6V
100 C 25 C
10 VGS=5V 10
1 1
0.1 1 10 100 3 5 7 9
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.3 14
VGS = 0V
On - Resistance RDS(ON) (m)
IDS = 250
1.2
12
1.1
10
1.0 VGS=10V
8
0.9
0.8 6
-50 0 50 100 150 200 0 20 40 60 80 100 120 140
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - TC
100 1.8
Reverse Drain Current IS (A)
VGS =10V
1.6
Normalized On Resistance
ID = 40A
1.4
100 C 25 C
10 1.2
1.0
0.8
1 0.6
0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175
Source - Drain Voltage VSD (V) Junction Temperature Tc ( C )
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KF80N08P/F
2008. 6. 19 Revision No : 0 4/7
KF80N08P/F
2008. 6. 19 Revision No : 0 5/7
KF80N08P/F
Fig14. Gate Charge
VGS
10 V
Fast
Recovery
ID Diode
0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS
Fig15. Single Pulsed Avalanche Energy
1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS
L
IAS
50V
25
VDS ID(t)
VGS VDD VDS(t)
10 V
Time
tp
Fig16. Resistive Load Switching
VDS
90%
RL
0.5 VDSS
VGS 10%
td(off)
25 td(on) tr
VDS tf
ton toff
VGS
10V
2008. 6. 19 Revision No : 0 6/7
KF80N08P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
DUT Body Diode Forword Current
VDS
ISD
IF (DUT) di/dt
IRM
IS
Body Diode Reverse Current
0.8 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD
10V VGS
Body Diode Forword Voltage drop
2008. 6. 19 Revision No : 0 7/7