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WEITRON 2SD965
NPN Transistor COLLECTOR
P b Lead(Pb)-Free 2.
3. 1. EMITTER
BASE 2. COLLECTOR
3. BASE
FEATURES : 1.
EMITTER TO-92
* Flash unit of camera
* Switching circuit
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 42 V
Collector-Emitter Voltage VCEO 22 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 5 A
Collector Power Dissipation PC 750 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
hFE(1) VCE=2V, IC= 0.15 mA 150
DC current gain hFE(2) VCE= 2V,IC = 500 mA 340 2000
hFE(3) VCE=2V, IC = 2A 150
Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V
VCE=6V,
Transition frequency fT 150 MHz
IC=50mA,f=30MHz
CLASSIFICATION OF hFE(2)
Rank R T V
Range 340-600 560-950 900-2000
WEITRON 1/2 01-Sep-09
hpp://www.weitron.com.tw
2SD965
Ratings and Characteristic Curves
WEITRON 2/2 01-Sep-09
hpp://www.weitron.com.tw