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STW40NS15
N-CHANNEL 150V - 0.042 - 40A TO-247
MESH OVERLAYTM MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STW40NS15 150 V <0.052 40A
s TYPICAL RDS(on) = 0.042
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
DESCRIPTION 2
This powermos MOSFET is designed using the 1
company's consolidated strip layout-based MESH
TO-247
OVERLAYTM process. This technology matches
and improves the performances compared with
standard parts from various sources.

INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s PRIMARYSWITCH IN ISOLATED DC-DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 150 V
VDGR Drain-gate Voltage (RGS = 20 k) 150 V
VGS Gate- source Voltage