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IPA
K
PHU97NQ03LT
N-channel TrenchMOS logic level FET
Rev. 02 -- 21 December 2010 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Suitable for high frequency Suitable for logic level gate drive
applications due to fast switching sources
characteristics

1.3 Applications
Computer motherboards

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25