Text preview for : mpsa13_mpsa14.pdf part of KEC mpsa13 mpsa14 . Electronic Components Datasheets Active components Transistors KEC mpsa13_mpsa14.pdf
Back to : mpsa13_mpsa14.pdf | Home
SEMICONDUCTOR MPSA13/14
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
B C
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO 30 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCES 30 V M 0.45 MAX
N 1.00
C
VEBO 1 2 3
Emitter-Base Voltage 10 V
L
M
Collector Current IC 500 mA 1. EMITTER
2. BASE
PC 3. COLLECTOR
Collector Power Dissipation 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage VCES IC=0.1mA 30 - - V
Emitter Cut-off Current ICBO VCB=30V - - 100 nA
Emitter Cut-off Current IEBO VEB=10V - - 100 nA
MPSA13 5,000 - -
IC=10mA, VCE=5V
MPSA14 10,000 - -
DC Current Gain hFE -
MPSA13 10,000 - -
IC=100mA, VCE=5V
MPSA14 20,000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE IC=100mA, VCE=5V - - 2.0 V
Current Gain Bandwith Product fT IC=10mA, f=100MHz, VCE=5V 125 - - MHz
2000. 2. 26 Revision No : 3 1/2
MPSA13/14
2000. 2. 26 Revision No : 3 2/2