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2SA1 203

SOT-89-3L

TRANSISTOR(PNP)
1. BASE
FEATURES
Complementary to 2SC2883 2. COLLECTOR

Small Flat Package
3. EMITTER
Audio Frequency Amplifier Application

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1.5 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
DC current gain hFE VCE=-2V, IC=-500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC=-1.5A,IB=-30mA -2 V
Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V
Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 50 pF
Transition frequency fT VCE=-2V,IC= -500mA 120 MHz

CLASSIFICATION OF hFE
RANK O Y
RANGE 100