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Advance Technical Information
TrenchT2TM GigaMOSTM IXTZ550N055T2 VDSS = 55V
Power MOSFET ID25 = 550A
RDS(on) 1.0m
(Electrically Isolated Tab)

N-Channel Enhancement Mode
Avalanche Rated
DE475 D
Fast Intrinsic Diode D
D

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25