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SI4410DY
N-channel TrenchMOS logic level FET
Rev. 03 -- 4 December 2009 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Low conduction losses due to low Suitable for high frequency
on-state resistance applications due to fast switching
characteristics

1.3 Applications
DC motor control Notebook computers
DC-to-DC convertors Portable equipment
Lithium-ion battery applications

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25