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MMBTA64
COLLECTOR
Darlington Transistor 3
3
PNP Silicon
1 1
BASE 2
2 SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCES -30 Vdc
Collector-Base Voltage VCBO -30 Vdc
Emitter-Base Voltage VEBO -10 Vdc
Collector Current-Continuous IC -500 mAdc
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Total Device Dissipation FR-5 Board (1) PD 225 mW
TA =25 C
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction Ambient R JA 556 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage(I C =-100 uAdc, IB =0) V(BR)CEO -30 - Vdc
Collector Cufoff Current(V CB =-30Vdc, I E =0) ICBO - -0.1 uAdc
Emitter Cufoff Current(VEB =-10Vdc, IC =0) IEBO - -0.1 uAdc
1. FR-5=1.0 I I0.75 I I0.062 in
_ _
2. Pulse Test: Pulse Width< 300us, Duty Cycle < 2.0%
WEITRON
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MMBTA64
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
hFE
10000 -
(I C = -10 mAdc, VCE= -5.0 Vdc)
20000 -
(IC = -100 mAdc, VCE = -5.0Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - -1.5 Vdc
(IC = -100 mAdc, IB = -0.1mAdc)
Base-Emitter On Voltage
VBE(on) - -2.0 Vdc
(IC = -100 mAdc, VCE = -5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT 125 - MHz
(IC = -10 mAdc, VCE=-5.0 Vdc, f=100 MHz)
WEITRON
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MMBTA64
200
Ta =125 C
100
DC CURRENT GAIN : h FE
70
50
-10V
30 25 C
VCE =-2.0V
20
-5.0V
10
7.0
5.0 -55 C
3.0
2.0
-0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300
COLLECTOR CURRENT : IC (mA)
FIG.1 DC Current Gain
VCE ,COLLECTOR-EMITTER VOLTAGE
-2.0 -2.0
Ta =25 C Ta =25 C
-1.8
V,VOLTAGE (VOLTS)
-1.6 VBE(sat) @IC/IB=100
-1.6
IC =-10mA -50mA -100mA -175mA -300mA
-1.2 -1.4
(VOLTS)
VBE(on) @VCE =-5.0V
-0.8 VCE(sat) @IC/IB=1000 -1.2
IC/IB=100
-1.0
-0.4
-0.8
0 -0.6
-0.3-0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200-300 -0.1-0.2-0.5 -1 -2 -5 -10-20 -50-100-200-500-1K -5K-10K
-2K
COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (uA)
FIG.2 "On" Voltage FIG.3 Collector Saturatiion Region
10
HIGH FREQUENCY CURRENT
VCE =-5.0V
4.0 f=100MHz
3.0 Ta =25 C
2.0
GAIN : hFE
1.0
0.4
0.2
0.1
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K
COLLECTOR CURRENT : IC (mA)
FIG.4 High Frequency Current Gain
WEITRON
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MMBTA64
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
T OP V IE W B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON
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