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SEMICONDUCTOR KTK5164S
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES L B L
DIM MILLIMETERS
2.5 Gate Drive. A _
2.93 + 0.20
Low Threshold Voltage : Vth=0.5 1.5V. B 1.30+0.20/-0.15
C 1.30 MAX
D
2
High Speed. 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Small Package.
H
1
G 1.90
Enhancement-Mode. H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
M 0.20 MIN
MAXIMUM RATINGS (Ta=25 ) N 1.00+0.20/-0.10
N
C
J
P 7
CHARACTERISTIC SYMBOL RATING UNIT M
K
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGSS 20 V 1. SOURCE
2. GATE
DC Drain Current ID 200 mA 3. DRAIN
Drain Power Dissipation PD 200 mW
Channel Temperature Tch 150
Storage Temperature Range Tstg -55 150 SOT-23
EQUIVALENT CIRCUIT
D
Marking
G
Lot No.
Type Name
KM
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 60 - - V
Drain Cut-off Current IDSS VDS=60V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=10V, ID=1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=10V, ID=50mA 100 - - mS
Drain-Source ON Resistance RDS(ON) ID=50mA, VGS=2.5V - 1.5 2
Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz - 55 65 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz - 13 18 pF
Output Capacitance Coss VDS=10V, VGS=0V, f=1MHz - 40 50 pF
tr I D =100mA
Rise Time 10V
V OUT - 8 -
VIN
Turn-on Time ton 0 - 14 -
RL
50
Switching Time 10