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WTC1333
Surface Mount P-Channel
Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT
-550m AMPERES

DRAIN SOURCE VOLTAGE
1 -20 VOLTAGE
GATE

Features: 2
*Super High Dense Cell Design For Low RDS(ON) SOURCE

R DS(ON) <600m@V GS =-10V 3
*Simple Gate Drive 1
*Small package Outline 2
*Fast Switching Speed
*SOT-23 Package
SOT-23
Description
*Designer with best combination of fast switching
*Low on-resistance
*Cost-effectiveness

Maximum Ratings(T =25 C Unless Otherwise Specified)
A

Rating Symbol Value Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS