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STS7C4F30L
N-CHANNEL 30V - 0.018 - 7A SO-8
P-CHANNEL 30V - 0.070 - 4A SO-8
STripFETTM POWER MOSFET

TYPE VDSS RDS(on) ID

STS7C4F30L(N-Channel) 30 V <0.022 7A
STS7C4F30L(P-Channel) 30 V <0.080 4A
s TYPICAL RDS(on) (N-Channel) = 0.018
s TYPICAL RDS(on) (P-Channel) = 0.070
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE

DESCRIPTION SO-8
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s DC/DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter N-CHANNEL P-CHANNEL Unit
VDS Drain-source Voltage (VGS = 0) 30 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 30 V
VGS Gate- source Voltage