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SEMICONDUCTOR BC807
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR


GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to BC817. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX




D
2 3 0.45+0.15/-0.05
D




A

G
E 2.40+0.30/-0.20




H
1 G 1.90
H 0.95
MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCBO -50 V N 1.00+0.20/-0.10




N
P 7




C




J
Collector-Emitter Voltage VCEO -45 V
M




K
Emitter-Base Voltage VEBO -5 V
Collector Current IC -800 mA 1. EMITTER
2. BASE
Emitter Current IE 800 mA
3. COLLECTOR
Collector Power Dissipation PC* 350 mW
Junction Temperature Tj 150