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BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
Rev. 05 -- 17 February 2009 Product data sheet

1. Product profile

1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include internal gate resistors and
TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.

1.2 Features and benefits
Low conduction losses due to low Reduced component count due to
on-state resistance integrated gate resistor
Q101 compliant

1.3 Applications
12 V loads General purpose power switching
Automotive systems Motors, lamps and solenoids

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
ID drain current VGS = 10 V; Tmb = 25