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2N5550(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160V)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 160 V Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 140 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 0.625 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 160 V
Collector-emitter breakdown
V(BR)CEO IC=1mA, IB=0 140 V
voltage
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=100V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.05 A
hFE(1) VCE=5V,IC=1mA 60
DC current gain hFE(2) VCE=5V,IC =10mA 60 250
hFE(3) VCE=5V,IC=50mA 20
IC= 10mA, IB=1mA 0.15
Collector-emitter saturation voltage VCEsat V
IC= 50mA, IB=5mA 0.25
IC= 10mA, IB=1mA 1
Base-emitter saturation voltage VBEsat V
IC= 50mA, IB=5 mA 1.2
Transition frequency fT VCE=10V,IC=10mA,,f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF
VCE=5V,Ic=0.25mA,
Noise figure NF 10 dB
f=1KHZ,Rs=1k
2N5550(NPN)
TO-92 Bipolar Transistors
Typical Characteristics